SE process is adopted for high efficiency c-Si PERC solar cell fabrication. Laser beam interacts with the doping material (PSG layer) on wafer surface. SE Laser Doping reduces the Ohmic contact resistance, and enhances photon absorption at shorter wavelength. This process improves the solar cell open circuit voltage Voc, short circuit current Isc, and fill factor FF, therefore enables c-Si solar cell with +0.20% higher conversion efficiency. Top-hat beam shapes are used for the doping process.
+0.20% efficiency increase for PERC cells
Excellent Ohmic contact
No additional equipment is needed besides the laser tool